Renesas Electronics Corp. NE55410GR-T3-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. NE55410GR-T3-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF POWER N-CHANNEL, MOSFET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F16
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
Tin/Bismuth (Sn/Bi)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
16
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Power Gain-Min (Gp) (dB)
12
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
150