Renesas Electronics Corp. NE5510179A-T1 | 搜芯易Sourcengine

Renesas Electronics Corp. NE5510179A-T1

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Dissipation-Max (W)
1.6
Drain Current-Max (ID) (A)
0.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Operating Temperature-Max (Cel)
125
Power Dissipation Ambient-Max (W)
1.6