Renesas Electronics Corp. NE5500234-T1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. NE5500234-T1-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
CEL Silicon Medium Power LDMOSFET RoHS directive compliant
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-F3
Configuration
N-Channel
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN BISMUTH
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
125 Cel
Power Dissipation-Max (Abs)
10 W
Transistor Element Material
SILICON