Renesas Electronics Corp. NE425S01-T1 | 搜芯易Sourcengine

Renesas Electronics Corp. NE425S01-T1

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
O-XRDB-G4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
10.5 dB
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.02 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3 V
Operating Temperature-Max
125 Cel
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
0.165 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED