Renesas Electronics Corp. NE4210S01-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE4210S01-A

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-PXMW-G4
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN BISMUTH
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
11 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.015 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3 V
Operating Temperature-Max
125 Cel
Power Dissipation-Max (Abs)
0.165 W
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED