Renesas Electronics Corp. NE3519M04-T2-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE3519M04-T2-A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
16.5
Power Dissipation-Max (W)
0.15
Drain Current-Max (ID) (A)
0.025
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED