Renesas Electronics Corp. NE3517S03-T1C-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE3517S03-T1C-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
FET RF 4V 20GHZ S03
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PXMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
Power Gain-Min (Gp) (dB)
11.5
Power Dissipation-Max (W)
0.165
Drain Current-Max (ID) (A)
0.015
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
125
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED