Renesas Electronics Corp. NE3516S02-T1C-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE3516S02-T1C-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IC HJ-FET RF N-CH S02 4-MICROX
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
S-PQMW-F4
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
13 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.06 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
4 V
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.165 W