Renesas Electronics Corp. NE3512S02-T1D-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE3512S02-T1D-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF MOSFET N-CH 4V 0.07A 4-Pin Case S-02 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
J-STD-609 Code
e6
Operating Mode
DEPLETION MODE
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
QUAD
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
12.5
Power Dissipation-Max (W)
0.165
Drain Current-Max (ID) (A)
0.015
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
3
Operating Temperature-Max (Cel)
125