CALIFORNIA EASTERN LABORATORIES NE3210S01-T1B | 搜芯易Sourcengine

CALIFORNIA EASTERN LABORATORIES NE3210S01-T1B

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF JFET Transistors Super Lo Noise HJFET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PRDB-G4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
12 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.015 A
Highest Frequency Band
X BAND
DS Breakdown Voltage-Min
3 V
Transistor Element Material
SILICON