NE321000
CALIFORNIA EASTERN LABORATORIES
- 生命周期状态Contact Mfr
- REACHREACH compliant
- 说明RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XUUC-N4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)12
- Drain Current-Max (ID) (A)0.015
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)3
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NE321000