Renesas Electronics Corp. NE25337-M | 搜芯易Sourcengine

Renesas Electronics Corp. NE25337-M

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
O-PRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DUAL GATE, ENHANCEMENT MODE
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
16 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.035 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.035 pF
DS Breakdown Voltage-Min
10 V
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.2 W