CALIFORNIA EASTERN LABORATORIES NE25139T1 | 搜芯易Sourcengine

CALIFORNIA EASTERN LABORATORIES NE25139T1

生命周期状态
EOL
说明
FET RF 13V 900MHZ SOT-143
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
Dual Gate
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
16 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.03 pF
Transistor Element Material
GALLIUM ARSENIDE