Renesas Electronics Corp. NE20200 | 搜芯易Sourcengine

Renesas Electronics Corp. NE20200

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.40
SB Code
8541.21.00.40

JESD-30 Code
R-XUUC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HETERO-JUNCTION
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
11 dB
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.06 A
Highest Frequency Band
KA BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
4 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.2 W