CALIFORNIA EASTERN LABORATORIES NE1280100 | 搜芯易Sourcengine

CALIFORNIA EASTERN LABORATORIES NE1280100

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, KA Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KA BAND
Power Gain-Min (Gp) (dB)
9.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
10
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.2