Renesas Electronics Corp. N0609N-S19-AY | 搜芯易Sourcengine

Renesas Electronics Corp. N0609N-S19-AY

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Nch Power MOSFET 60V 120A 3mohm TO-220
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
282
Drain Current-Max (ID) (A)
120
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
480
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.8
Avalanche Energy Rating (Eas) (mJ)
420
Pulsed Drain Current-Max (IDM) (A)
480
Drain-source On Resistance-Max (ohm)
0.003
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED