Renesas Electronics Corp. N0301P-T1-AT | 搜芯易Sourcengine

Renesas Electronics Corp. N0301P-T1-AT

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Pch Single Power Mosfet -30V -4.0A 75Mohm Sot-23F
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.106 ohm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
2.9
Length
2