Rochester Electronics, LLC MWS5101AEL3X | 搜芯易Sourcengine

Rochester Electronics, LLC MWS5101AEL3X

生命周期状态
Active
说明
Standard SRAM, 256X4, 350ns, CMOS, PDIP22
类别
Semiconductors Memory ICs SRAMs STANDARD SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-PDIP-T22
Memory Width
4
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
256X4
Number of Functions
1
Number of Terminals
22
Access Time-Max (ns)
350
Number of Words Code
256
Memory Density (bits)
1024
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
6.5
Supply Voltage-Min (V)
4
Supply Voltage-Nom (V)
5
Number of Words (words)
256
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0