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MS5832J-25

MICROTECH SEMICONDUCTORS

MICROTECH SEMICONDUCTORS MS5832J-25
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-XDIP-T28
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    STANDARD SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Memory Organization
    32KX8
  • Number of Terminals
    28
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    25
  • Number of Words Code
    32K
  • Memory Density (bits)
    262144
  • Package Body Material
    CERAMIC
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    32768
  • Standby Current-Max (A)
    0.001
  • Standby Voltage-Min (V)
    4.5
  • Supply Current-Max (mA)
    120
  • Package Equivalence Code
    DIP28,.6
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55

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MS5832J-25