MN4SV17160BT-10
Panasonic Corporation
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G50
- Memory Width16
- Organization1MX16
- Package CodeTSOP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density16777216 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles2048
- Terminal Pitch0.8 mm
- Access Time-Max8 ns
- Number of Words1048576 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max120 mA
- Number of Terminals50
- Standby Current-Max0.001 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSOP50,.46,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)100 MHz
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MN4SV17160BT-10