Renesas Electronics Corp. MC-4R256CEE6B-745 | 搜芯易Sourcengine

Renesas Electronics Corp. MC-4R256CEE6B-745

生命周期状态
Discontinued
说明
Rambus DRAM Module, 128MX16, CMOS, PDMA184
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N184
Memory Width
16
Organization
128MX16
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
2147483648 bit
Memory IC Type
RAMBUS DRAM MODULE
Terminal Pitch
1 mm
Number of Words
134217728 words
Terminal Position
DUAL
Number of Terminals
184
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM184,40
Clock Frequency-Max (fCLK)
711 MHz