MC-454BA80F-A12
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明Synchronous DRAM Module, 4MX80, 9.5ns, CMOS, PDMA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width80
- Organization4MX80
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density335544320 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Refresh Cycles2048
- Terminal Pitch1.27 mm
- Access Time-Max9.5 ns
- Number of Words4194304 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max2300 mA
- Number of Terminals200
- Standby Current-Max0.04 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM200
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)3.3 V
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MC-454BA80F-A12