Renesas Electronics Corp. MC-454AD645FA-A10B | 搜芯易Sourcengine

Renesas Electronics Corp. MC-454AD645FA-A10B

生命周期状态
Discontinued
说明
Synchronous DRAM Module, 4MX64, 7ns, CMOS, PDMA168
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N168
Memory Width
64
Organization
4MX64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Refresh Cycles
2048
Terminal Pitch
1.27 mm
Access Time-Max
7 ns
Number of Words
4194304 words
Seated Height-Max
29.21 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
1024 mA
Number of Terminals
168
Standby Current-Max
0.032 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM168
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
100 MHz