MC-421000C9A-10
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明Static Column DRAM, 1MX9, 100ns, CMOS
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Memory Width9
- Surface MountNO
- J-STD-609 Codee0
- Memory IC TypeSTATIC COLUMN DRAM
- Refresh Cycles512
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionSINGLE
- Memory Organization1MX9
- Number of Terminals30
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)100
- Number of Words Code1M
- Memory Density (bits)9437184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)5
- Number of Words (words)1048576
- Standby Current-Max (A)0.009
- Supply Current-Max (mA)540
- Package Equivalence CodeSIP30,.2
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MC-421000C9A-10