Renesas Electronics Corp. MBN600C20 | 搜芯易Sourcengine

Renesas Electronics Corp. MBN600C20

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 600A I(C), 2000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
5.4 V
JESD-30 Code
R-XUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, HIGH SPEED, LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
1600 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
4000 ns
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
600 A
Power Dissipation-Max (Abs)
4000 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
2000 V