Renesas Electronics Corp. MBN1200E33D | 搜芯易Sourcengine

Renesas Electronics Corp. MBN1200E33D

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X9
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
3
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
2400
Turn-off Time-Nom (toff) (ns)
3000
Collector Current-Max (IC) (A)
1200
Collector-emitter Voltage-Max (V)
3300