Renesas Electronics Corp. MBL150GS6N | 搜芯易Sourcengine

Renesas Electronics Corp. MBL150GS6N

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-X7
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
SINGLE
Additional Feature
HIGH SPEED, ULTRA SOFT FAST RECOVERY
Number of Elements
1
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
300 ns
Collector Current-Max (IC)
150 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V