Renesas Electronics Corp. MBB100GS12A | 搜芯易Sourcengine

Renesas Electronics Corp. MBB100GS12A

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
Additional Feature
HIGH SPEED, ULTRA SOFT FAST RECOVERY
Number of Elements
6
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
350 ns
Collector Current-Max (IC)
100 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V