Analog Devices, Inc. MAT01AHZ | 搜芯易Sourcengine

Analog Devices, Inc. MAT01AHZ

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Matched Monolithic Dual Transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
O-MBCY-W6
Configuration
Dual
JEDEC-95 Code
TO-78
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e4
VCEsat-Max (V)
0.2
Case Connection
SUBSTRATE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
6
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
500
Power Dissipation-Max (W)
1.8
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.025
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
45
Power Dissipation Ambient-Max (W)
1.8
Transition Frequency-Nom (fT) (MHz)
450
Width
9.4 mm
Length
9.4 mm