Renesas Electronics Corp. M5M5V5636UG-16#B0 | 搜芯易Sourcengine

Renesas Electronics Corp. M5M5V5636UG-16#B0

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Application Specific SRAM, 512KX36, 3.8ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B165
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e3
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY
Memory Organization
512KX36
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
3.8
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
2.625
Supply Voltage-Min (V)
2.375
Supply Voltage-Nom (V)
2.5
Number of Words (words)
524288
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
2.38
Supply Current-Max (mA)
380
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
167
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0