ASI Semiconductor, Inc. LTE42012R | 搜芯易Sourcengine

ASI Semiconductor, Inc. LTE42012R

生命周期状态
Active
说明
Transistor
类别
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
NO
Number of Elements
1
Polarity/Channel Type
NPN
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
800 A
Power Dissipation-Max (Abs)
8 W