Texas Instruments Incorporated LMG3624REQR | 搜芯易Sourcengine

Texas Instruments Incorporated LMG3624REQR

生命周期状态
Active
RoHS
符合RoHS标准
说明
GaN FET with Integrated Driver Protection and Current Sense Emulation
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.39.00.60

Application
SWITCHING
JESD-30 Code
R-PQCC-N38
Configuration
SINGLE WITH BUILT-IN GATE DRIVER
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
JUNCTION
J-STD-609 Code
e4
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
38
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5.4
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
700
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
0.22
Time@Peak Reflow Temperature-Max (s)
30