LMG2100R044RARR
Texas Instruments Incorporated
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection 16-VQFN-FCRLF -40 to 125
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.39.00.60
- SB Code8542.39.00.00
- Width (mm)4.5
- Length (mm)5.5
- JESD-30 CodeR-PQCC-N16
- Package CodeHVQCCN
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormNO LEAD
- J-STD-609 Codee4
- Output PolarityTRUE
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- High Side DriverYES
- Interface IC TypeHALF BRIDGE BASED MOSFET DRIVER
- Terminal PositionQUAD
- Turn-on Time (us)0.035
- Turn-off Time (us)0.033
- Number of Functions1
- Number of Terminals16
- Terminal Pitch (mm)0.5
- Input CharacteristicsSTANDARD
- Package Body MaterialPLASTIC/EPOXY
- Output CharacteristicsTOTEM-POLE
- Seated Height-Max (mm)0.85
- Supply Voltage-Max (V)5.25
- Supply Voltage-Min (V)4.75
- Supply Voltage-Nom (V)5
- Supply Current-Max (mA)15
- Package Equivalence CodeLCC26,.18X.22,20
- Moisture Sensitivity Level2
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
- Output Peak Current Limit-Nom (A)8
- Time@Peak Reflow Temperature-Max (s)30
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