Samsung Semiconductor, Inc. K6R1016V1D-EI080 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K6R1016V1D-EI080

生命周期状态
Discontinued
REACH
REACH compliant
说明
Standard SRAM, 64KX16, 8ns, CMOS, PBGA48
类别
Semiconductors Memory ICs SRAMs STANDARD SRAM

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
6
Length (mm)
7
JESD-30 Code
R-PBGA-B48
Memory Width
16
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
64KX16
Number of Functions
1
Number of Terminals
48
Terminal Pitch (mm)
0.75
Access Time-Max (ns)
8
Number of Words Code
64K
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
65536
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED