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K6F1016V4B-FF55T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K6F1016V4B-FF55T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B48
  • Memory Width
    16
  • Organization
    64KX16
  • Package Code
    FBGA
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    1048576 bit
  • Memory IC Type
    STANDARD SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    0.75 mm
  • Access Time-Max
    55 ns
  • Number of Words
    65536 words
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    40 mA
  • Number of Terminals
    48
  • Standby Current-Max
    1.0E-6 Amp
  • Standby Voltage-Min
    1.5 V
  • Number of Words Code
    64K
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Package Equivalence Code
    BGA48,6X8,30
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Nom (Vsup)
    3.3 V

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