JANSG2N7520U3C
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- 说明Power Field-Effect Transistor, 21A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCN3A001.A.1.A
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)75
- Drain Current-Max (ID) (A)21
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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