Littelfuse IXXN200N60B3 | 搜芯易Sourcengine

Littelfuse IXXN200N60B3

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 280A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.7
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
940
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
140
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
395
Collector Current-Max (IC) (A)
280
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600
Screening Level / Reference Standard
UL RECOGNIZED