Littelfuse IXGN120N60A3 | 搜芯易Sourcengine

Littelfuse IXGN120N60A3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.35
Case Connection
ISOLATED
Terminal Finish
Nickel (Ni)
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
595
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
123
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
830
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600
Screening Level / Reference Standard
UL RECOGNIZED