Littelfuse IXGK35N120BD1 | 搜芯易Sourcengine

Littelfuse IXGK35N120BD1

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-264AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-264AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e1
VCEsat-Max (V)
3.3
Case Connection
COLLECTOR
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Position
SINGLE
Fall Time-Max (ns)
320
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
350
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
77
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
600
Turn-off Time-Nom (toff) (ns)
340
Collector Current-Max (IC) (A)
70
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
10