Littelfuse IXDR30N120D1 | 搜芯易Sourcengine

Littelfuse IXDR30N120D1

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e1
Case Connection
ISOLATED
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
300
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
170
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
570
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
10