IXBN42N170A
Littelfuse
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明IGBT, IXBN42N170A, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High blocking voltage Low conduction losses MOS gate turn on for drive simplicity Simpler system design Applications Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)6
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)313
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)33
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)308
- Collector Current-Max (IC) (A)38
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)5.5
- Collector-emitter Voltage-Max (V)1700
- Screening Level / Reference StandardUL RECOGNIZED
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IXBN42N170A