IXA17IF1200HJ
Littelfuse
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明IGBT, IXA17IF1200HJ, Littelfuse Manufactured through the state-of-the-art GenX IGBT process and an extreme-light punch through design platform, this device features high-current handling capabilities, high-speed switching abilities, low total energy loss, and low current fall times. It has a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Features Easy paralleling due to the positive temperature coefficient of the on-state voltage Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, fans
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee1
- VCEsat-Max (V)2.1
- Case ConnectionISOLATED
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)100
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)110
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)350
- Collector Current-Max (IC) (A)28
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardIEC-60747
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IXA17IF1200HJ