Renesas Electronics Corp. ISL73127RHVX | 搜芯易Sourcengine

Renesas Electronics Corp. ISL73127RHVX

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Radiation Hardened Ultra High Frequency NPN Transistor Arrays
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N16
Configuration
SEPARATE, 5 ELEMENTS
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e4
VCEsat-Max (V)
0.5
Terminal Finish
GOLD
Terminal Position
UPPER
Additional Feature
LOW NOISE
Number of Elements
5
Number of Terminals
16
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
40
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.0113
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
8
Power Dissipation Ambient-Max (W)
1.25
Transition Frequency-Nom (fT) (MHz)
8000
Screening Level / Reference Standard
MIL-38535; RH - 100K Rad(Si)
Time@Peak Reflow Temperature-Max (s)
30