Renesas Electronics Corp. ISL73096EHVX | 搜芯易Sourcengine

Renesas Electronics Corp. ISL73096EHVX

生命周期状态
Active
REACH
REACH compliant
说明
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N16
Configuration
SEPARATE, 5 ELEMENTS
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e4
VCEsat-Max (V)
0.5
Terminal Finish
GOLD
Terminal Position
UPPER
Additional Feature
LOW NOISE
Number of Elements
5
Number of Terminals
16
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN AND PNP
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
40
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.0113
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
8
Power Dissipation Ambient-Max (W)
1.25
Transition Frequency-Nom (fT) (MHz)
8000
Screening Level / Reference Standard
MIL-38535; RH - 100K Rad(Si)