VISHAY SILICONIX IRFF110 | 搜芯易Sourcengine

VISHAY SILICONIX IRFF110

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
类别
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-205
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Drain-source On Resistance-Max (ohm)
0.6