ROHM Semiconductor IMD14T108 | 搜芯易Sourcengine

ROHM Semiconductor IMD14T108

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS NPN/PNP PREBIAS 0.3W SMT6
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN SILVER COPPER
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 45.5
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
82
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.5 A
Power Dissipation-Max (Abs)
0.3 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
250 MHz