ROHM Semiconductor IMB9AT110 | 搜芯易Sourcengine

ROHM Semiconductor IMB9AT110

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS PREBIAS DUAL PNP SMT6
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e1
VCEsat-Max (V)
0.3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
68
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.07
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
250