Integrated Device Technology, Inc. IDT71578S35DBRT | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT71578S35DBRT

生命周期状态
Discontinued
说明
Cache SRAM, 8KX8, 35ns, CMOS
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Memory Width
8
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Memory Organization
8KX8
Number of Functions
1
Access Time-Max (ns)
35
Number of Words Code
8K
Memory Density (bits)
65536
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
8192
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55