Renesas Electronics Corp. IDT70V657S12BC8 | 搜芯易Sourcengine

Renesas Electronics Corp. IDT70V657S12BC8

生命周期状态
Discontinued
说明
Multi-Port SRAM, 32KX36, 12ns, CMOS, PBGA256
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
17
Length (mm)
17
JESD-30 Code
S-PBGA-B256
Memory Width
36
Package Code
LBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn63Pb37)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
32KX36
Number of Functions
1
Number of Terminals
256
Terminal Pitch (mm)
1
Access Time-Max (ns)
12
Number of Words Code
32K
Memory Density (bits)
1179648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
3.45
Supply Voltage-Min (V)
3.15
Supply Voltage-Nom (V)
3.3
Number of Words (words)
32768
Standby Current-Max (A)
0.015
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
465
Package Equivalence Code
BGA256,16X16,40
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20