Renesas Electronics Corp. IDT70V3389S4BCG8 | 搜芯易Sourcengine

Renesas Electronics Corp. IDT70V3389S4BCG8

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Application Specific SRAM, 64KX18, 4.2ns, CMOS, PBGA256
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B256
Memory Width
18
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
64KX18
Number of Terminals
256
Terminal Pitch (mm)
1
Access Time-Max (ns)
4.2
Number of Words Code
64K
Memory Density (bits)
1179648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
65536
Standby Current-Max (A)
0.015
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
460
Package Equivalence Code
BGA256,16X16,40
Clock Frequency-Max (MHz)
133
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
30